MPSA62(2014) 查看數據表（PDF） - Central Semiconductor
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MPSA62 Datasheet PDF : 3 Pages
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MPSA62 MPSA65
MPSA63 MPSA66
MPSA64
SILICON
PNP DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPSA62 series
devices are silicon PNP Darlington transistors,
manufactured by the epitaxial planar process, designed
for applications requiring extremely high gain.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCES
VEBO
IC
PD
TJ, Tstg
JA
MPSA63 MPSA65 UNITS
MPSA62 MPSA64 MPSA66
20
30
30
20
30
30
10
10
8.0
500
625
-65 to +150
200
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
MPSA62 MPSA63 MPSA64 MPSA65
SYMBOL TEST CONDITIONS
MIN MAX MIN MAX MIN MAX MIN MAX
ICBO
VCB=15V
- 100 - -
-- --
ICBO
VCB=30V
--
- 100 - 100 - 100
IEBO
VEB=10V
- 100 - 100 - 100 - -
IEBO
VEB=8.0V
--
--
- - - 100
BVCES IC=100μA
20 - 30 - 30 - 30 -
VCE(SAT) IC=10mA, IB=10μA
- 1.0 - -
-- --
VCE(SAT) IC=100mA, IB=0.1mA
--
- 1.5 - 1.5 - 1.5
VBE(ON) VCE=5.0V, IB=10mA
- 1.4 - -
-- --
VBE(ON) VCE=5.0V, IB=100mA
--
- 2.0 - 2.0 - 2.0
hFE
VCE=5.0V, IC=10mA
20K - 5K - 10K - 50K -
hFE
VCE=5.0V, IC=100mA
- - 10K - 20K - 20K -
fT
VCE=5.0V, IC=100mA, f=100MHz - - 125 - 125 - - -
fT
VCE=10V, IC=30mA, f=50MHz
--
--
- - 100 -
Cob
VCB=10V, IE=0, f=100kHz
2.5 (TYP) 2.5 (TYP) 2.5 (TYP) 2.5 (TYP)
NF
VCE=5.0V, IC=1.0mA,
RS=100kΩ, f=1.0kHz
2.0 (TYP) 2.0 (TYP) 2.0 (TYP) 2.0 (TYP)
MPSA66
MIN MAX
--
- 100
--
- 100
30 -
--
- 1.5
--
- 2.0
75K -
40K -
--
100 -
2.5 (TYP)
2.0(TYP)
UNITS
nA
nA
nA
nA
V
V
V
V
V
MHz
MHz
pF
dB
R1 (18-March 2014)
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