DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MR2835SK 查看數據表(PDF) - ON Semiconductor

零件编号
产品描述 (功能)
生产厂家
MR2835SK
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MR2835SK Datasheet PDF : 5 Pages
1 2 3 4 5
MR2835SK
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Instantaneous Forward Voltage (IF = 100 A) (Note 1)
Reverse Current (VR = 20 V) (Note 1)
Breakdown Voltage (IZ = 100 mA) (Note 1)
Breakdown Voltage (IZ = 80 A, TC = 85°C, PW = 80 ms)
Breakdown Voltage Temperature Coefficient
Forward Voltage Temperature Coefficient (IF = 10 mA)
1. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2%.
*Typical
0 − 150 V
50 mF
2.0 W
Symbol
VF
IR
V(BR)
V(BR)
V(BR)TC
VFTC
Min
Max
Unit
1.1
V
5.0
mA
24
32
V
40
V
0.09
%/°C
−2.0* mV/°C
di/dt LIMITATION
100 mH
MR2835SK
Figure 1. Load Dump Test Circuit
MOUNTING AND HANDLING
The mechanical stress limits for the Top Can diode are as follows:
Compression:
Tension:
Torsion:
Shear:
33.7 lbs
33.7 lbs
6.3 inch lbs
56.2 lbs
150 newtons
150 newtons
0.7 newton meters
250 newtons
MECHANICAL STRESS
COMPRESSION
TORSION
TENSION
SHEAR
http://onsemi.com
2

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]