MRF1035 查看數據表（PDF） - Tyco Electronics

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MRF1035

Microwave Pulse Power Transistor

Tyco Electronics 

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic

Symbol

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0)

Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0)

Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)

Collector Cutoff Current (VCB = 36 Vdc, IE = 0)

ON CHARACTERISTICS

DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc)

FUNCTIONAL TESTS

Common–Base Amplifier Power Gain

(VCC = 50 Vdc, Pout = 350 W Peak, f = 1090 MHz)

Collector Efficiency

(VCC = 50 Vdc, Pout = 350 W Peak, f = 1090 MHz)

Load Mismatch

(VCC = 50 Vdc, Pout = 350 W Peak, f = 1090 MHz,

VSWR = 10:1 All Phase Angles)

V(BR)CES

V(BR)CBO

V(BR)EBO

ICBO

hFE

GPB

η

ψ

Min

Typ

Max

Unit

65

—

—

Vdc

65

—

—

Vdc

3.5

—

—

Vdc

—

—

25

mAdc

20

—

—

—

8.5

9.0

—

dB

40

—

—

%

No Degradation in Output Power

RF INPUT

Z5

Z1 Z2 Z3 Z4

L1

C2

C3

D.U.T.

Z6 Z7 Z8 Z9

+

C4

C1

+

-

RF OUTPUT

C1 — 75 pF 100 Mil Chip Capacitor

C2 — 39 pF 100 Mil Chip Capacitor

C3 — 0.1 µF

C4 — 100 µF, 100 Vdc, Electrolytic

L1 — 3 Turns #18 AWG, 1/8″ ID, 0.18 Long

Z1–Z9 — Microstrip, See Details

Board Material — Teflon, Glass Laminate

Dielectric Thickness = 0.030″

ąεr = 2.55, 2 Oz. Copper

REV 1

2

.094

.589

.573

.083 .170

.616

.838

.130

.395

.402

1.518 .571

.278

.394

.258 .170

.364

.594 1.685

.095

Figure 1. Test Circuit

.156

.159

.382 .083

.396

.100

.803

.160

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