MRF275 查看數據表（PDF） - Motorola => Freescale

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MRF275

150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET

Motorola => Freescale 

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

Power Field-Effect Transistor

N–Channel Enhancement–Mode

Designed primarily for wideband large–signal output and driver stages from

100 – 500 MHz.

• Guaranteed Performance @ 500 MHz, 28 Vdc

Output Power — 150 Watts

Power Gain — 10 dB (Min)

Efficiency — 50% (Min)

100% Tested for Load Mismatch at all Phase Angles with VSWR 30:1

• Overall Lower Capacitance @ 28 V

Ciss — 135 pF

Coss — 140 pF

Crss — 17 pF

• Simplified AVC, ALC and Modulation

D

Typical data for power amplifiers in industrial and

commercial applications:

G

• Typical Performance @ 400 MHz, 28 Vdc

Output Power — 150 Watts

G

Power Gain — 12.5 dB

Efficiency — 60%

• Typical Performance @ 225 MHz, 28 Vdc

Output Power — 200 Watts

Power Gain — 15 dB

Efficiency — 65%

S

(FLANGE)

D

Order this document

by MRF275G/D

MRF275G

150 W, 28 V, 500 MHz

N–CHANNEL MOS

BROADBAND

100 – 500 MHz

RF POWER FET

CASE 375–04, STYLE 2

MAXIMUM RATINGS

Rating

Drain–Source Voltage

Drain–Gate Voltage

(RGS = 1.0 MΩ)

Gate–Source Voltage

Drain Current — Continuous

Total Device Dissipation @ TC = 25°C

Derate above 25°C

Storage Temperature Range

Operating Junction Temperature

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

VDSS

VDGR

VGS

ID

PD

Tstg

TJ

Symbol

RθJC

Value

65

65

± 40

26

400

2.27

– 65 to +150

200

Max

0.44

Unit

Vdc

Vdc

Adc

Adc

Watts

W/°C

°C

°C

Unit

°C/W

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA

MRF275G

1

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