MMBR901LT1 查看數據表（PDF） - Motorola => Freescale
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MMBR901LT1 Datasheet PDF : 7 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBR901LT1/D
The RF Line
NPN Silicon
High-Frequency Transistor
Designed primarily for use in high–gain, low–noise small–signal amplifiers for
operation up to 2.5 GHz. Also usable in applications requiring fast switching
times.
• High Current–Gain — Bandwidth Product
• Low Noise Figure @ f = 1.0 GHz —
NF(matched) = 1.8 dB (Typ) (MRF9011LT1)
NF(matched) = 1.9 dB (Typ) (MMBR901LT1, T3)
• High Power Gain —
Gpe(matched) = 13.5 dB (Typ) @ f = 1.0 GHz (MRF9011LT1)
Gpe(matched) = 12.0 dB (Typ) @ f = 1.0 GHz (MMBR901LT1, T3)
• Guaranteed RF Parameters (MRF9011LT1)
• Surface Mounted SOT–23 & SOT–143 Offer Improved RF Performance
Lower Package Parasitics
High Gain
• Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
T3 suffix = 10,000 units per reel
MMBR901LT1, T3
MRF9011LT1
IC = 30 mA
SURFACE MOUNTED
HIGH–FREQUENCY
TRANSISTOR
NPN SILICON
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE, MMBR901LT1, T3
CASE 318A–05, STYLE 1
SOT–143
LOW PROFILE, MRF9011LT1
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Power Dissipation @ TC = 75°C (1)
Derate above 25°C
MMBR901LT1, T3;
MRF9011LT1
VCEO
VCBO
VEBO
IC
PD(max)
Storage Temperature Range
All
Maximum Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Tstg
TJ(max)
Symbol
Storage Temperature
Thermal Resistance, Junction to Case
MRF9011LT1, MMBR901LT1, T3
Tstg
RθJC
DEVICE MARKING
MRF9011LT1 = 01
MMBR901LT1, T3 = 7A
NOTE:
1. Case temperature measured on collector lead immediately adjacent to body of package.
Value
15
25
2.0
30
0.300
4.00
– 55 to +150
150
Max
150
200
Unit
Vdc
Vdc
Vdc
mAdc
Watt
mW/°C
°C
°C
Unit
°C
°C/W
REV 8
© MMoOtorToOla,RInOc.L1A99R7 F DEVICE DATA
MMBR901LT1, T3 MRF9011LT1
2–1
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