MRF9045MR1 查看數據表（PDF） - Motorola => Freescale

零件编号

产品描述 (功能)

生产厂家

MRF9045MR1

RF Power Field Effect Transistor

Motorola => Freescale 

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0)

IDSS

—

—

10

µAdc

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0)

IDSS

—

—

1

µAdc

Gate–Source Leakage Current

(VGS = 5 Vdc, VDS = 0 )

IGSS

—

—

1

µAdc

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 150 µAdc)

VGS(th)

2

—

4

Vdc

Gate Quiescent Voltage

(VDS = 28 Vdc, ID = 350 mAdc)

VGS(Q)

—

3.7

—

Vdc

Drain–Source On–Voltage

(VGS = 10 Vdc, ID = 1 Adc)

VDS(on)

—

0.19

0.4

Vdc

Forward Transconductance

(VDS = 10 Vdc, ID = 3 Adc)

gfs

—

4

—

S

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 28 Vdc, VGS = 0, f = 1 MHz)

Ciss

—

74

—

pF

Output Capacitance

(VDS = 28 Vdc, VGS = 0, f = 1 MHz)

Coss

—

39

—

pF

Reverse Transfer Capacitance

(VDS = 28 Vdc, VGS = 0, f = 1 MHz)

Crss

—

1.9

—

pF

(continued)

MRF9045M MRF9045MR1

2

MOTOROLA RF DEVICE DATA

Share Link: