MRF901 查看數據表（PDF） - Advanced Semiconductor
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MRF901 Datasheet PDF : 1 Pages
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MRF901
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The ASI MRF901 is Designed for high
gain. Low noise small-signal amplifiers.
Applications up to 2.5 GHz.
FEATURES:
• Low Noise Figure
• High Gain
• Common Emitter
MAXIMUM RATINGS
IC
30 mA
VCBO
25 V
VCEO
15 V
VEBO
2.0 V
PDISS
0.375 W @ TC = 75 °C
TJ
-55 °C to +150 °C
TSTG
-55 °C to +150 °C
θJC
200 °C/W
PACKAGE STYLE
Dim. Are in mm
Leads 1 and 3 = Emitter 2 = Collector 4 = Base
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 0.1 mA
BVCEO
IC = 1.0 mA
BVEBO
IE = 0.1 mA
ICBO
VCB = 15 V
hFE
VCE = 5.0 V
IC = 5.0 mA
MINIMUM TYPICAL MAXIMUM
25
15
2.0
50
30
80
200
UNITS
V
V
V
nA
---
Ccb
VCB = 10 V
fT
VCE = 10 V
IC = 15 mA
f = 1.0 MHz
f = 1.0 GHz
0.40
1.0
pF
4.5
GHz
NFMIN
VCE = 6.0 V
IC = 15 mA
f = 1.0 GHz
2.0
2.5
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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