MRF9002RS 查看數據表（PDF） - Motorola => Freescale

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MRF9002RS

RF Power Field Effect Transistor Array

Motorola => Freescale 

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 20 µAdc)

VGS(th)

Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 25 mAdc)

VGS(Q)

Drain–Source On–Voltage

(VGS = 10 Vdc, ID = 0.1 Adc)

VDS(on)

FUNCTIONAL TESTS (Per Transistor in Motorola Test Fixture, 50 ohm system)

Common–Source Amplifier Power Gain @ P1dB

Gps

(VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz)

Drain Efficiency @ P1dB

η

(VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz)

Input Return Loss @ P1dB

IRL

(VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz)

Power Output, 1 dB Compression Point

(VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz)

P1dB

Output Mismatch Stress

Ψ

(VDD = 26 Vdc, Pout = 2 W CW, IDQ = 25 mA,

f = 960.0 MHz, VSWR = 10:1, All Phase Angles at Frequency

of Tests)

Min

Typ

Max

Unit

2.4

—

3

—

—

0.3

4

Vdc

5

Vdc

—

Vdc

15

18

—

dB

35

50

—

%

—

–15

–9

dB

34

37

—

dBm

No Degradation In Output Power

MRF9002R2

2

MOTOROLA RF DEVICE DATA

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