MRF9045LR1(2004) 查看數據表（PDF） - Freescale Semiconductor

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MRF9045LR1
(Rev.:2004)

RF Power Field Effect Transistors

Freescale Semiconductor 

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N−Channel Enhancement−Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequen-

cies up to 1000 MHz. The high gain and broadband performance of these

devices make them ideal for large−signal, common−source amplifier applica-

tions in 28 volt base station equipment.

• Typical Two−Tone Performance at 945 MHz, 28 Volts

Output Power — 45 Watts PEP

Power Gain — 18.8 dB

Efficiency — 42%

IMD — −32 dBc

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW

Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large−Signal Impedance Parameters

• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.

• Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.

MRF9045

Rev. 9, 12/2004

MRF9045LR1

MRF9045LSR1

945 MHz, 45 W, 28 V

LATERAL N−CHANNEL

BROADBAND

RF POWER MOSFETs

CASE 360B−05, STYLE 1

NI−360

MRF9045LR1

Table 1. Maximum Ratings

Rating

Drain−Source Voltage

Gate−Source Voltage

Total Device Dissipation @ TC = 25°C

Derate above 25°C

Storage Temperature Range

Operating Junction Temperature

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Table 3. ESD Protection Characteristics

Test Conditions

Human Body Model

Machine Model

MRF9045LR1

MRF9045LSR1

MRF9045LR1

MRF9045LSR1

Symbol

VDSS

VGS

PD

Tstg

TJ

CASE 360C−05, STYLE 1

NI−360S

MRF9045LSR1

Value

−0.5, +65

−0.5, + 15

125

0.71

175

1

−65 to +150

200

Unit

Vdc

Vdc

W

W/°C

°C

°C

Symbol

RθJC

Value

1.4

1.0

Unit

°C/W

Class

1 (Minimum)

M1 (Minimum)

NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

© Freescale Semiconductor, Inc., 2004. All rights reserved.

RF Device Data

Freescale Semiconductor

MRF9045LR1 MRF9045LSR1

5−1

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