Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
Gate−Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 150 µAdc)
VGS(th)
2
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 350 mAdc)
VGS(Q)
—
Drain−Source On−Voltage
(VGS = 10 Vdc, ID = 1 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
VDS(on)
—
gfs
—
Dynamic Characteristics
Input Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
—
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
Typ
—
—
—
3
3.7
0.19
4
69
37
1.5
Max
Unit
10
µAdc
1
µAdc
1
µAdc
4
Vdc
—
Vdc
0.4
Vdc
—
S
—
pF
—
pF
—
pF
(continued)
MRF9045LR1 MRF9045LSR1
5−2
RF Device Data
Freescale Semiconductor