MRF9045LR1(2004) 查看數據表（PDF） - Freescale Semiconductor
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MRF9045LR1 Datasheet PDF : 8 Pages
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Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Two−Tone Common−Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Gps
17
18.8
—
dB
Two−Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
η
38
42
—
%
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IMD
—
−32
−28
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IRL
—
−14
−9
dB
Two−Tone Common−Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Gps
—
18.5
—
dB
Two−Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
η
—
41
—
%
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IMD
—
−33
—
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IRL
—
13
—
dB
Power Output, 1 dB Compression Point
(VDD = 28 Vdc, Pout = 45 W CW, IDQ = 350 mA,
f1 = 945.0 MHz)
P1dB
—
55
—
W
Common−Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 45 W CW, IDQ = 350 mA,
f1 = 945.0 MHz)
Gps
—
18
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 45 W CW, IDQ = 350 mA,
f1 = 945.0 MHz)
η
—
60
—
%
Output Mismatch Stress
Ψ
(VDD = 28 Vdc, Pout = 45 W CW, IDQ = 350 mA,
f = 945.0 MHz, VSWR = 10:1, All Phase Angles at Frequency
of Tests)
No Degradation In Output Power
RF Device Data
Freescale Semiconductor
MRF9045LR1 MRF9045LSR1
5−3
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