MS1409 查看數據表（PDF） - Advanced Power Technology
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产品描述 (功能)
生产厂家
MS1409 Datasheet PDF : 3 Pages
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140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE TRANSISTOR
VHF COMMUNICATIONS
Features
• 175 MHz
• 28 VOLTS
• POUT = 2.5 W
• GP = 10 dB MINIMUM
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1409 is a NPN silicon transistor designed for high
power gain VHF and UHF communication applications.
Gold metalization and diffused emitter ballast resistors
provide superior long term reliability.
MS1409
1. Emitter
2. Base
3. Collector
TO-39
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)
Symbol
Parameter
VCBO
VCEO
VEBO
PDISS
Collector-base Voltage
Collector-emitter Voltage
Emitter-base Voltage
Total Power Dissipation
IC
Collector Peak Current
TJ
TSTG
Junction Temperature
Storage Temperature
Thermal Data
RTH(J-CASE) Thermal Resistance Junction-case
Value
65
40
4.0
7.0
1.0
200
-65 to 200
25
Unit
V
V
V
W
A
ºC
ºC
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
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