MS1278 查看數據表（PDF） - Advanced Power Technology
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MS1278 Datasheet PDF : 4 Pages
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RF & MICROWAVE TRANSISTORS
TV/LINEAR APPLICATIONS
Features
• 170 - 230 MHz
• 28 VOLTS
• POUT = 100 WATTS
• GP = 11.0 dB GAIN MINIMUM
• GOLD METALLIZATION
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1278 is a gold metallized epitaxial silicon NPN planar
transistor using diffused emitter ballast resistors for high
linearity Class AB operation in VHF and Band III television
transmitters and transposers.
MS1278
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCBO
VCEO
VEBO
IC
PDISS
TJ
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
TSTG
Storage Temperature
Value
65
33
3.5
16
150
+200
-65 to +150
Thermal Data
RTH(J-C)
Thermal Resistance Junction-case
1.2
MS1278.PDF 5-28-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Unit
V
V
V
A
W
°C
°C
°C/W
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