MS1280 查看數據表（PDF） - Advanced Power Technology
零件编号
产品描述 (功能)
生产厂家
MS1280 Datasheet PDF : 3 Pages
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140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE TRANSISTORS
TV/LINEAR APPLICATIONS
Features
• 170-230 MHz
• 28 VOLTS
• IMD = -53 dBc
• POUT = 20 WATTS
• GP = 7.5 dB MINIMUM
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1280 is a gold metallized epitaxial silicon NPN
transistor designed for high linearity class AB operation.
Internal impedance matching and an emitter ballasted
die geometry make this devise ideally suited for VHF and
Band lll television transmitter and transposers.
MS1280
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCBO
VCEO
VEBO
IC
PDISS
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
TJ
Junction Temperature
TSTG
Storage Temperature
Thermal Data
RTH(J-C)
Thermal Resistance Junction-case
Value
60
30
4.0
16
150
+200
-65 to +150
1.2
Unit
V
V
V
A
W
°C
°C
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
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