DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MS2206 查看數據表(PDF) - Advanced Power Technology

零件编号
产品描述 (功能)
生产厂家
MS2206
APT
Advanced Power Technology  APT
MS2206 Datasheet PDF : 3 Pages
1 2 3
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
1025-1150 MHz
GOLD METALLIZATION
INFINITE VSWR CAPABILITY @ RATED CONDITIONS
Pout = 4 W MINIMUM
GP= 10 dB
COMMON BASE CONFIGURATION
DESCRIPTION:
The MS2206 is a common base, silicon NPN microwave transistor
designed for Class C driver applications under DME or IFF pulse
conditions. This device is capable of withstanding an infinite load
VSWR at any phase angle under rated conditions.
MS2206
.280 4LSL (M115)
Epoxy Sealed
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
PDISS
VCE
TJ
IC
TSTG
Parameter
Power Dissipation
Collector-Emitter Bias Voltage
Junction Temperature
Device Current
Storage Temperature
Thermal Data
RTH(J-C)
Junction-case Thermal Resistance*
Value
7.5
37
200
1.0
-65 to +200
35
Unit
W
V
ºC
A
ºC
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]