G30N60C3D 查看數據表（PDF） - Intersil
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G30N60C3D Datasheet PDF : 7 Pages
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HGTG30N60C3D
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNITS
Diode Reverse Recovery Time
Thermal Resistance
trr
RθJC
IEC = 30A, dIEC/dt = 100A/µs
IEC = 1.0A, dIEC/dt = 100A/µs
IGBT
Diode
-
52
60
ns
-
42
50
ns
-
-
0.6
oC/W
-
-
1.3
oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). The HGTG30N60C3D was tested per JEDEC standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
diode losses.
Typical Performance Curves
150
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VCE = 10V
125
100
TC = 150oC
75
TC = 25oC
50
TC = -40oC
25
0
4
6
8
10
12
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = 25oC
150
VGE = 15.0V 12.0V
10.0V
125
9.5V
100
9.0V
75
50
8.5V
7.0V
8.0V
25
7.5V
0
0
2
4
6
8
10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. SATURATION CHARACTERISTICS
150
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 10V
125
TC = -40oC
100
TC = 25oC
75
TC = 150oC
50
25
0
0
1
2
3
4
5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
150
PULSE DURATION = 250µs
DUTY CYCLE <0.5%
125 VGE = 15V
100
TC = -40oC
75
TC = 150oC
TC = 25oC
50
25
0
0
1
2
3
4
5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
3
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