MSS1P3 查看數據表（PDF） - Vishay Semiconductors
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MSS1P3 Datasheet PDF : 4 Pages
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10
TJ = 150 °C
1 TJ = 125 °C
TJ = 25 °C
0.1
MSS1P3, MSS1P4
Vishay General Semiconductor
1000
100
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
100
10
TJ = 150 °C
1
TJ = 125 °C
1000
100
Junction to Ambient
0.1
0.01
TJ = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
1000
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
MicroSMP (DO-219AD)
Cathode Band
0.059 (1.50)
0.043 (1.10)
0.030 (0.75)
0.022 (0.55)
0.055 (1.40)
0.047 (1.20)
0.039 (0.98)
0.031 (0.78)
0.030 (0.75)
0.022 (0.55)
0.091 (2.30)
0.083 (2.10)
0.106 (2.70)
0.091 (2.30)
Mounting Pad Layout
0.079
(2.00)
0.032
(0.80)
0.029 (0.73)
0.025 (0.63)
0.011 (0.27)
0.005 (0.12)
0.043
(1.10)
0.020 (0.50)
0.032
(0.80)
Revision: 03-May-2018
3
Document Number: 89019
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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