DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MT28F160C34 查看數據表(PDF) - Micron Technology

零件编号
产品描述 (功能)
生产厂家
MT28F160C34
Micron
Micron Technology Micron
MT28F160C34 Datasheet PDF : 28 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
ADVANCE
1 MEG x 16
3V ENHANCED+ BOOT BLOCK FLASH MEMORY
BALL DESCRIPTIONS
46-BALL FBGA
NUMBERS SYMBOL
3B
WE#
TYPE
Input
5A
WP#
Input
7D
CE#
Input
4B
RP#
Input
8F
OE#
Input
1A, 1B, 1C, 1D,
2A, 2B, 2C, 3A,
3C, 5B, 6A, 6B,
6C, 7A, 7B, 7C,
8A, 8B, 8C, 8D
A0–A19
2D, 2E, 2F, 3D, DQ0–DQ15
3E, 3F, 4D, 4E,
4F, 5D, 5E, 6D,
6E, 6F, 7E, 7F
4A
VPP
Input
Input/
Output
Supply
5F
1E
1F, 8E
VCC
VCCQ
VSS
Supply
Supply
Supply
DESCRIPTION
Write Enable: Determines if a given cycle is a WRITE cycle. If WE# is
LOW, the cycle is either a WRITE to the command state machine (CSM)
or to the memory array.
Write Protect: Unlocks the soft-protected blocks when HIGH if VPP =
1.65V–3.465V or 12V and RP# = VIH for WRITE or ERASE. Does not
affect WRITE or ERASE operation on other blocks.
Chip Enable: Activates the device when LOW. When CE# is HIGH, the
device is disabled and goes into standby power mode.
Reset/Power-Down: When LOW, RP# clears the status register, sets the
write state machine (WSM) to the array read mode and places the
device in deep power-down mode. All inputs, including CE#, are
“Don’t Care,” and all outputs are High-Z. RP# must be held at VIH
during all other modes of operation.
Output Enable: Enables data output buffers when LOW. When OE# is
HIGH, the output buffers are disabled.
Address Inputs: These address inputs select a unique, 16-bit word out
of the 1,048,576 available.
Data I/O: These data I/O are data output lines during any READ
operation or data input lines during a WRITE. Data I/O are used to
input commands to the CSM.
Write/Erase Supply Voltage: From a WRITE or ERASE CONFIRM until
completion of the operation, VPP must be 1.65V–3.465V or 12V. VPP =
“Don’t Care” during all other operations.
Power Supply: 3.3V ±5%.
I/O Supply Voltage: 3.3V ±5%.
Ground.
1 Meg x 16 3V Enhanced+ Boot Block Flash Memory
MT28F160C34_3.p65 – Rev. 3, Pub. 8/01
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]