MT16VDDF12864HY-262 查看數據表（PDF） - Micron Technology

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MT16VDDF12864HY-262

SMALL-OUTLINE DDR SDRAM DIMM

Micron Technology 

512MB, 1GB (x64)

200-PIN DDR SODIMM

Table 16: DDR SDRAM Component Electrical Characteristics and Recommended AC

Operating Conditions (-26A, -265, -202) (Continued)

Notes: 1–5, 12–15, 29, 40; notes appear on pages 20–23; 0°C £ TA £ +70°C; VDD = VDDQ = +2.5V ±0.2V

AC CHARACTERISTICS

PARAMETER

DQS read preamble

DQS read postamble

ACTIVE bank a to ACTIVE bank b command

DQS write preamble

DQS write preamble setup time

DQS write postamble

Write recovery time

Internal WRITE to READ command delay

Data valid output window

REFRESH to REFRESH command interval

Average periodic refresh interval

Terminating voltage delay to VDD

Exit SELF REFRESH to non-READ command

Exit SELF REFRESH to READ command

-26A

SYMBOL MIN MAX

tRPRE

tRPST

tRRD

tWPRE

tWPRES

tWPST

tWR

tWTR

NA

tREFC

tREFI

tVTD

tXSNR

tXSRD

0.9 1.1

0.4 0.6

15

0.25

0

0.4 0.6

15

1

tQH -tDQSQ

70.3

7.8

0

75

200

-265

-202

MIN

0.9

0.4

15

0.25

0

MAX MIN MAX UNITS NOTES

1.1 0.9 1.1 tCK

37

0.6 0.4 0.6 tCK

15

ns

0.25

tCK

0

ns 18, 19

0.4 0.6 0.4 0.6 tCK

17

15

15

ns

1

1

tCK

tQH -tDQSQ tQH - tDQSQ ns

22

70.3

70.3 µs

21

7.8

7.8

µs

21

0

0

ns

75

80

ns

200

200

tCK

09005aef80a646bc

DDF16C64_128x64HG_B.fm - Rev. B 7/03 EN

19

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2003 Micron Technology, Inc.

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