MT3S06T 查看數據表（PDF） - Toshiba
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MT3S06T Datasheet PDF : 5 Pages
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Microwave Characteristics (Ta = 25°C)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
⎪S21e⎪2 (1)
⎪S21e⎪2 (2)
NF (1)
NF (2)
VCE = 3 V, IC = 5 mA
VCE = 1 V, IC = 5 mA, f = 2 GHz
VCE = 3 V, IC = 7 mA, f = 2 GHz
VCE = 1 V, IC = 3 mA, f = 2 GHz
VCE = 3 V, IC = 3 mA, f = 2 GHz
MT3S06T
Min Typ. Max Unit
7
10
⎯
8.5
6.5 9.5
⎯
1.7
⎯
1.6
⎯ GHz
⎯
dB
⎯
3
dB
3
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Reverse transfer capacitance
ICBO
IEBO
hFE
Cre
VCB = 5 V, IE = 0
VEB = 1 V, IC = 0
VCE = 1 V, IC = 5 mA
VCB = 1 V, IE = 0, f = 1 MHz
Note: Cre is measured by 3 terminal method with capacitance bridge.
Min Typ. Max Unit
⎯
⎯
0.1
μA
⎯
⎯
1
μA
70
⎯
140
(Note) ⎯ 0.25 0.7
pF
Caution
This device is sensitive to electrostatic discharge. Please handle with caution.
2
2007-11-01
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