MTP10N40 查看數據表（PDF） - Motorola => Freescale

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MTP10N40

TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS

Motorola => Freescale 

MTP10N40E

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0, ID = 0.25 mA)

Zero Gate Voltage Drain Current

(VDS = 400 V, VGS = 0)

(VDS = 320 V, VGS = 0, TJ = 125°C)

Gate–Body Leakage Current — Forward (VGSF = 20 Vdc, VDS = 0)

Gate–Body Leakage Current — Reverse (VGSR = 20 Vdc, VDS = 0)

ON CHARACTERISTICS*

Gate Threshold Voltage

(VDS = VGS, ID = 0.25 mAdc)

(TJ = 125°C)

Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 5.0 A)

Drain–to–Source On–Voltage (VGS = 10 Vdc)

(ID = 5.0 A)

(ID = 2.5 A, TJ = 100°C)

Forward Transconductance (VDS = 15 Vdc, ID = 5.0 A)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

(VDS = 25 V, VGS = 0,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS*

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 200 V, ID ≈ 10 A,

RL = 20 Ω, RG = 9.1 Ω,

VGS(on) = 10 V)

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

(VDS = 320 V, ID = 10 A,

VGS = 10 V)

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

Forward Turn–On Time

Reverse Recovery Time

(IS = 10 A, di/dt = 100 A/µs)

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the contact screw on tab to center of die)

(Measured from the drain lead 0.25″ from package to center of die)

V(BR)DSS

400

—

—

Vdc

IDSS

mAdc

—

—

0.25

—

—

1.0

IGSSF

—

—

100

nAdc

IGSSR

—

—

100

nAdc

VGS(th)

Vdc

2.0

—

4.0

1.5

—

3.5

RDS(on)

—

0.4

0.55 Ohms

VDS(on)

—

—

Vdc

—

6.0

—

4.75

gFS

4.0

—

—

mhos

Ciss

Coss

Crss

—

1570

—

pF

—

230

—

—

55

—

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

—

25

—

ns

—

37

—

—

75

—

—

31

—

—

46

63

nC

—

10

—

—

23

—

VSD

ton

trr

—

—

2.0

Vdc

—

**

—

ns

—

250

—

Ld

nH

—

3.5

—

—

4.5

—

Internal Source Inductance

Ls

(Measured from the source lead 0.25″ from package to source bond pad)

—

7.5

—

nH

* Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%.

** Limited by circuit inductance.

2

Motorola TMOS Power MOSFET Transistor Device Data

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