3N100E 查看數據表（PDF） - Motorola => Freescale
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3N100E Datasheet PDF : 8 Pages
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TYPICAL ELECTRICAL CHARACTERISTICS
MTP3N100E
6
TJ = 25°C
5
VGS = 10 V
6
VDS ≥ 10 V
5
100°C
4
6V
4
5V
3
3
25°C
2
1
4V
0
0 2 4 6 8 10 12 14 16 18 20
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
2
TJ = –55°C
1
0
2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 5.2 5.6 6.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
6
VGS = 10 V
5
TJ = 100°C
4
25°C
3
2
– 55°C
1
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
3.8
TJ = 25°C
3.6
3.4
VGS = 10 V
3.2
15 V
3.0
2.8
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.4
VGS = 10 V
ID = 1.5 A
2.0
1.6
100000
10000
VGS = 0 V
1000
TJ = 125°C
100°C
1.2
100
25°C
0.8
10
0.4
–50 –25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
1
0 100 200 300 400 500 600 700 800 900 1000
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3
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