MTP4N80 查看數據表（PDF） - Motorola => Freescale

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MTP4N80

TMOS E-FET™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate

Motorola => Freescale 

MTP4N80E

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

Zero Gate Voltage Drain Current

(VDS = 800 Vdc, VGS = 0 Vdc)

(VDS = 800 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (Negative)

V(BR)DSS

800

—

—

1.02

—

Vdc

—

mV/°C

IDSS

µAdc

—

—

10

—

—

100

IGSS

—

—

100

nAdc

VGS(th)

2.0

3.0

4.0

Vdc

—

7.0

—

mV/°C

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 2.0 Adc)

Drain–Source On–Voltage (VGS = 10 Vdc)

(ID = 4.0 Adc)

(ID = 2.0 Adc, TJ = 125°C)

Forward Transconductance (VDS = 15 Vdc, ID = 2.0 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Gate Charge

(See Figure 8)

(VDD = 400 Vdc, ID = 4.0 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

(VDS = 400 Vdc, ID = 4.0 Adc,

VGS = 10 Vdc)

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (1)

(IS = 4.0 Adc, VGS = 0 Vdc)

(IS = 4.0 Adc, VGS = 0 Vdc, TJ = 125°C)

RDS(on)

VDS(on)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

QT

Q1

Q2

Q3

VSD

—

1.95

3.0

Ohm

Vdc

—

8.24

12

—

—

10

2.0

4.3

—

mhos

—

1320

2030

pF

—

187

400

—

72

160

—

13

30

ns

—

36

90

—

40

80

—

30

75

—

36

80

nC

—

7.0

—

—

16.5

—

—

12

—

Vdc

—

0.812

1.5

—

0.7

—

Reverse Recovery Time

(See Figure 14)

(IS = 4.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

Reverse Recovery Stored Charge

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from contact screw on tab to center of die)

(Measured from the drain lead 0.25″ from package to center of die)

trr

ta

tb

QRR

LD

—

557

—

ns

—

100

—

—

457

—

—

2.33

—

µC

nH

—

3.5

—

4.5

Internal Source Inductance

LS

(Measured from the source lead 0.25″ from package to source bond pad)

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

—

7.5

—

nH

2

Motorola TMOS Power MOSFET Transistor Device Data

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