MTY14N100 查看數據表（PDF） - Motorola => Freescale
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MTY14N100 Datasheet PDF : 8 Pages
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TYPICAL ELECTRICAL CHARACTERISTICS
MTY14N100E
20
18 TJ = 25°C
16
14
12
10
8
VGS = 10 V
6V
8V
5V
6
4
2
0
024
6 8 10 12 14 16 18 20
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
30
VDS ≥ 10 V
25
TJ = –55°C
20
25°C
15
100°C
10
5
0
2
3
4
5
6
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
1.6
1.2
TJ = 100°C
VGS = 10 V
0.8
25°C
0.4
–55°C
0
0
4
8
12
16
20
24
28
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
0.85
TJ = 25°C
0.8
0.75
VGS = 10 V
0.7
15 V
0.65
0.6
0
4
8
12
16
20
24
28
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.5
VGS = 10 V
ID = 7 A
2.0
1.5
100000
10000
VGS = 0 V
1000
TJ = 125°C
100°C
1.0
100
25°C
0.5
10
0
– 50 – 25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
1
0 100 200 300 400 500 600 700 800 900 1000
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3
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