MTY55N20E 查看數據表（PDF） - Motorola => Freescale

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MTY55N20E

TMOS E-FET Power Field Effect Transistor

Motorola => Freescale 

MTY55N20E

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0, ID = 250 µA)

Temperature Coefficient (Positive)

Zero Gate Voltage Drain Current

(VDS = 200 Vdc, VGS = 0 Vdc)

(VDS = 200 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

V(BR)DSS

200

—

—

250

—

Vdc

—

mV/°C

IDSS

µAdc

—

—

10

—

—

200

IGSS

—

—

100

nAdc

VGS(th)

2

—

4

Vdc

—

7

—

mV/°C

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 27.5 Adc)

Drain–Source On–Voltage (VGS = 10 Vdc)

(ID = 55 Adc)

(ID = 27.5 Adc, TJ = 125°C)

Forward Transconductance (VDS = 10 Vdc, ID = 27.5 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1 MHz)

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Gate Charge

(See Figure 8)

(VDD = 100 Vdc, ID = 55 Adc,

VGS = 10 Vdc,

RG = 4.7 Ω)

(VDS = 160 Vdc, ID = 55 Adc,

VGS = 10 Vdc)

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 55 Adc, VGS = 0 Vdc)

(IS = 55 Adc, VGS = 0 Vdc, TJ = 125°C)

RDS(on)

VDS(on)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

QT

Q1

Q2

Q3

VSD

—

—

0.028 Ohm

Vdc

—

1.3

1.6

—

—

1.8

30

37

—

mhos

—

7200 10080

pF

—

1800

2520

—

460

920

—

33

66

ns

—

200

400

—

150

300

—

170

340

—

245

343

nC

—

33

—

—

128

—

—

79

—

Vdc

—

0.75

1.2

—

1.1

—

Reverse Recovery Time

(See Figure 14)

(IS = 55 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

Reverse Recovery Stored Charge

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

trr

ta

tb

QRR

LD

—

310

—

ns

—

220

—

—

90

—

—

4.6

—

µC

—

4.5

—

nH

Internal Source Inductance

LS

(Measured from the source lead 0.25″ from package to source bond pad)

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

—

13

—

nH

2

Motorola TMOS Power MOSFET Transistor Device Data

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