DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MT48LC16M4A2 查看數據表(PDF) - Micron Technology

零件编号
产品描述 (功能)
生产厂家
MT48LC16M4A2
Micron
Micron Technology Micron
MT48LC16M4A2 Datasheet PDF : 55 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
Commands
Truth Table 1 provides a quick reference of
available commands. This is followed by a written de-
scription of each command. Three additional Truth
64Mb: x4, x8, x16
SDRAM
Tables appear following the Operation section; these
tables provide current state/next state information.
TRUTH TABLE 1 – COMMANDS AND DQM OPERATION
(Note: 1)
NAME (FUNCTION)
COMMAND INHIBIT (NOP)
NO OPERATION (NOP)
ACTIVE (Select bank and activate row)
READ (Select bank and column, and start READ burst)
WRITE (Select bank and column, and start WRITE burst)
BURST TERMINATE
PRECHARGE (Deactivate row in bank or banks)
AUTO REFRESH or SELF REFRESH
(Enter self refresh mode)
LOAD MODE REGISTER
Write Enable/Output Enable
Write Inhibit/Output High-Z
CS# RAS# CAS# WE# DQM ADDR DQs NOTES
HXXXX
X
X
L HHHX
X
X
L L H H X Bank/Row X
3
L H L H L/H8 Bank/Col X
4
L
H
L
L L/H8 Bank/Col Valid
4
L HH L X
X
Active
L
LHLX
Code
X
5
L L LHX
X
X
6, 7
L L L L X Op-Code X
2
––––L
Active 8
– – – –H
High-Z 8
NOTE:
1. CKE is HIGH for all commands shown except SELF REFRESH.
2. A0-A11 define the op-code written to the mode register.
3. A0-A11 provide row address, and BA0, BA1 determine which bank is made active.
4. A0-A9 (x4), A0-A8 (x8), or A0-A7 (x16) provide column address; A10 (HIGH) enables the auto precharge feature
(nonpersistent), while A10 (LOW) disables the auto precharge feature; BA0, BA1 determine which bank is being read
from or written to.
5. A10 (LOW): BA0, BA1 determine the bank being precharged. A10 HIGH: All banks precharged and BA0, BA1 are “Don’t
Care.”
6. This command is AUTO REFRESH if CKE is (HIGH), SELF REFRESH if CKE is LOW.
7. Internal refresh counter controls row addressing; all inputs and I/Os are “Don’t Care” except for CKE.
8. Activates or deactivates the DQs during WRITEs (zero-clock delay) and READs (two-clock delay).
64Mb: x4, x8, x16 SDRAM
64MSDRAM_F.p65 – Rev. F; Pub. 1/03
11
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003, Micron Technology, Inc.

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]