MUR10005CT 查看數據表（PDF） - Naina Semiconductor ltd.
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MUR10005CT Datasheet PDF : 2 Pages
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Naina Semiconductor Ltd.
MUR10005CT thru
MUR10020CTR
Features
Super Fast Recovery Diode, 100A
• Dual Diode Construction
• Low Leakage Current
• Low forward voltage drop
• High surge current capability
• Super Fast Switching
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
Parameter
Symbol Conditions MUR10005CT(R)
Repetitive peak reverse
voltage
VRRM
50
RMS reverse voltage
VRMS
35
DC blocking voltage
VDC
50
Average forward current
IF(AV) TC ≤ 140 oC
100
Non-repetitive forward surge
current, half sine-wave
IFSM
TC = 25 oC
400
MUR10010CT(R)
100
70
100
100
400
MUR10020CT(R)
200
140
200
100
400
Units
V
V
V
A
A
Electrical Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol Conditions MUR10005CT(R)
DC forward voltage
VF
IF = 50 A
TJ = 25 oC
1.3
DC reverse current
VR = 50 V
IR
TJ = 25 oC
VR = 50 V
TJ = 125oC
25
1
Maximum Reverse Recovery
Time
IF = 0.5A
trr
IR = 1.0A
IRR = 0.25A
75
MUR10010CT(R)
1.3
25
1
75
MUR10020CT(R)
1.3
25
1
75
Units
V
µA
mA
nS
Thermal Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
MUR10005CT(R)
Thermal resistance
junction to case
RthJ-C
1.0
Operating, storage
temperature range
TJ , Tstg
- 40 to +175
MUR10010CT(R)
1.0
- 40 to +175
MUR10020CT(R)
1.0
- 40 to +175
Units
oC/W
oC
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com
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