MURH840CTG 查看數據表（PDF） - ON Semiconductor
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MURH840CTG Datasheet PDF : 2 Pages
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MURH840CT
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(TC = 155°C) Per Leg
Total Device
VRRM
400
V
VRWM
VR
IF(AV)
A
4.0
8.0
Peak Repetitive Forward Current per Diode Leg
(Square Wave, 20 kHz, TC = 149°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFM
8.0
A
IFSM
100
A
Controlled Avalanche Energy
WAVAL
20
mJ
Operating Junction and Storage Temperature Range
TJ, Tstg −65 to +175 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient
Conditions
Symbol
Max
Unit
Min. Pad
Min. Pad
RqJC
RqJA
3.0
°C/W
60
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 4.0 A, Tj = 150°C)
(iF = 4.0 A, Tj = 25°C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, Tj = 150°C)
(Rated dc Voltage, Tj = 25°C)
Maximum Reverse Recovery Time
(IF = 1.0 A, di/dt = 50 A/ms)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
Symbol Min
Typical
Max
Unit
vF
V
−
1.12
1.9
−
1.45
2.2
iR
−
300
−
4.0
mA
500
10
trr
−
−
ns
28
100
100
150°C
175°C
25°C
10
100°C
10
150°C
175°C
100°C
25°C
1.0
1.0
0.1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
0.1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Forward Voltage
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