BFX30 查看數據表（PDF） - Philips Electronics

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BFX30

PNP switching transistor

Philips Electronics 

Philips Semiconductors

PNP switching transistor

Product specification

BFX30

FEATURES

• High current (max.600 mA)

• Low voltage (max. 65 V).

APPLICATIONS

• Switching applications.

DESCRIPTION

PNP transistor in a TO-39 metal package.

PINNING

PIN

1

2

3

DESCRIPTION

emitter

base

collector, connected to case

handbook, halfpag1e

2

3

3

2

1

MAM334

Fig.1 Simplified outline (TO-39) and symbol.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

VCBO

VCEO

IC

Ptot

hFE

fT

toff

collector-base voltage

collector-emitter voltage

collector current (DC)

total power dissipation

DC current gain

transition frequency

turn-off time

CONDITIONS

MIN. TYP. MAX. UNIT

open emitter

open base

−

−

−65 V

−

−

−65 V

−

−

−600 mA

Tamb ≤ 25 °C

−

−

IC = −10 mA; VCE = −400 mV

50 90

IC = −50 mA; VCE = −10 V; f = 100 MHz

100 −

ICon = −150 mA; IBon = −15 mA; IBoff = 10 mA −

−

600 mW

200

−

MHz

300 ns

1997 Apr 16

2

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