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MX29F200CB 查看數據表(PDF) - Macronix International

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MX29F200CB Datasheet PDF : 47 Pages
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MX29F200C T/B
FEATURES
2M-BIT [256K x 8 / 128K x 16] SINGLE VOLTAGE
5V ONLY FLASH MEMORY
GENERAL FEATURES
• Single Power Supply Operation
- 4.5 to 5.5 volt for read, erase, and program operations
• 262,144 x 8 / 131,072 x 16 switchable
• Boot Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
• Sector Structure
- 16K-Byte x 1, 8K-Byte x 2, 32K-Byte x 1, and 64K-Byte x 3
• Sector protection
- Hardware method to disable any combination of sectors from program or erase operations
- Temporary sector unprotected allows code changes in previously locked sectors
• Latch-up protected to 100mA from -1V to Vcc + 1V
• Compatible with JEDEC standard
- Pinout and software compatible to single power supply Flash
PERFORMANCE
• High Performance
- Access time: 70/90ns
- Byte/Word program time: 9us/11us (typical)
- Erase time: 0.7s/sector, 4s/chip (typical)
• Low Power Consumption
- Low active read current: 40mA (maximum) at 5MHz
- Low standby current: 1uA (typical)
• Minimum 100,000 erase/program cycle
• 20 years data retention
SOFTWARE FEATURES
• Erase Suspend/ Erase Resume
- Suspends sector erase operation to read data from or program data to another sector which is not being
erased
• Status Reply
- Data# Polling & Toggle bits provide detection of program and erase operation completion
HARDWARE FEATURES
• Ready/Busy# (RY/BY#) Output
- Provides a hardware method of detecting program and erase operation completion
• Hardware Reset (RESET#) Input
- Provides a hardware method to reset the internal state machine to read mode
PACKAGE
• 44-Pin SOP
• 48-Pin TSOP
All Pb-free devices are RoHS Compliant
P/N:PM1250
REV. 1.9, JUN. 30, 2009
1

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