MXD1210C/D(1996) 查看數據表（PDF） - Maxim Integrated
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MXD1210C/D Datasheet PDF : 8 Pages
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Nonvolatile RAM Controller
ELECTRICAL CHARACTERISTICS
(VCCI < VBATT; positive edge rate at VBATT1, VBATT2 > 0.1V/µs, TA = TMIN to TMAX; unless otherwise noted.)
PARAMETER
BATTERY-BACKUP MODE
Quiescent Current (Note 1)
Output Supply Current (Notes 3, 4)
CEO Output Voltage
SYMBOL
IBATT
ICCO2
VO
CONDITIONS
VCCO, CEO open MXD1210C/E
VCCI = 0V
MXD1210M
VBATT - VCCO ≤ 0.2V
Output open
MIN TYP
2
VBATT - 0.2
MAX UNITS
100
nA
5
µA
300
µA
V
ELECTRICAL CHARACTERISTICS
(TA = TMIN to TMAX, unless otherwise noted.)
PARAMETER
SYMBOL
INPUT/OUTPUT CAPACITANCE (Note 5)
Input Capacitance
CIN
Output Capacitance
COUT
CONDITIONS
MIN TYP MAX UNITS
5
pF
7
pF
VCC POWER TIMING CHARACTERISTICS
(VCCI = +4.75V to +5.5V, TOL = GND; or VCCI = +4.5V to +5.5V, TOL = VCCO; TA = TMIN to TMAX; unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX
CE Propagation Delay
tPD
RL = 1kΩ,
CL = 50pF
MXD1210C
MXD1210E
MXD1210M
5
10
20
5
10
22
5
10
25
CE High to Power-Fail (Note 5)
tPF
0
UNITS
ns
ns
TIMING CHARACTERISTICS
(VCCI < +4.75V to +5.5V, TOL = GND; or VCCI < +4.5V , TOL = VCCO; TA = TMIN to TMAX; unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX
Recovery at Power-Up
tREC
2
5
20
VCC Slew-Rate Power-Down
tF
To out-of-tolerance condition
300
tFB
Tolerance to battery power
10
VCC Slew-Rate Power-Up
tR
CE Pulse Width (Note 6)
tCE
0
1.5
Note 1: Only one battery input is required. Unused battery inputs must be grounded.
Note 2: ICCO1 is the maximum average load current the MXD1210 can supply to the memories.
Note 3: ICCO2 is the maximum average load current the MXD1210 can supply to the memories in battery-backup mode.
Note 4: CEO can sustain leakage current only in battery-backup mode.
Note 5: Guaranteed by design.
Note 6: tCE max must be met to ensure data integrity on power loss.
UNITS
ms
µs
µs
µs
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