CXK5B16120TM 查看數據表（PDF） - Sony Semiconductor
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CXK5B16120TM Datasheet PDF : 10 Pages
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CXK5B16120J/TM
• Read cycle
Item
Read cycle time
Address access time
Chip enable access time
Output enable to output valid
Byte select to output valid
Output data hold time
Chip enable to output in low Z (CE)
Output enable to output in low Z (OE)
Byte select to output in low Z (LB, UB)
Chip disable to output in high Z (CE)
Output disable to output in high Z (OE)
Byte select to output in high Z (LB, UB)
Symbol
tRC
tAA
tCO
tOE
tLBC tUB
tOH
tLZ∗
tOLZ∗
tLBLZ, tUBLZ∗
tHZ∗
tOHZ∗
tLBHZ, tUBHZ∗
-12
Unit
Min. Max.
12
—
ns
—
12
ns
—
12
ns
—
6
ns
—
6
ns
3
—
ns
3
—
ns
0
—
ns
0
—
ns
0
6
ns
0
6
ns
0
6
ns
∗ Transition is measured ±200mV from steady voltage with specified loading in Fig. 1-(2).
This parameter is sampled and is not 100% tested.
• Write cycle
Item
Write cycle time
Address valid to end of write
Chip enable to end of write
Byte select to end of write
Data valid to end to write
Data hold from end of write
Write pulse width
Address set up time
Write recovery time
Output active from end of write
Write to output in high Z
Symbol
tWC
tAW
tCW
tLBW, tUBW
tDW
tDH
tWP
tAS
tWR
tOW*
tWHZ*
-12
Unit
Min. Max.
12
—
ns
10
—
ns
10
—
ns
10
—
ns
8
—
ns
0
—
ns
10
—
ns
0
—
ns
0
—
ns
4
—
ns
0
6
ns
∗ Transition is measured ±200mV from steady voltage with specified loading in Fig. 1-(2).
This parameter is sampled and is not 100% tested.
–4–
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