CXK5B16120J 查看數據表（PDF） - Sony Semiconductor

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CXK5B16120J

65536-word × 16-bit High Speed Bi-CMOS Static RAM

Sony Semiconductor 

CXK5B16120J/TM

• Write cycle (3) : LB, UB control

Address

CE

tAS

LB, UB

tWC

tA

W

tCW

tWR

tLBW, tUBW

tWP

WE

Data in

tD

tD

W

H

Data valid

Data out

tLBLZ

tUBLZ

tWHZ

High

impedance

∗ Do not apply the data input voltage of the opposite phase to the output while I/O pin is in output condition.

–7–

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