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TB1800M 查看數據表(PDF) - Diodes Incorporated.

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TB1800M Datasheet PDF : 6 Pages
1 2 3 4 5 6
TB0640M - TB3500M
Maximum Ratings @TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Non-Repetitive Peak Impulse Current
Non-Repetitive Peak On-State Current
Typical Positive Temperature Coefficient for Breakdown Voltage
@10/1000us
@8.3ms (one-half cycle)
Symbol
Ipp
ITSM
ΔVBR/ΔTj
Value
50
30
0.1
Unit
A
A
%/°C
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Lead
Thermal Resistance, Junction to Ambient
Junction Temperature Range
Storage Temperature Range
Symbol
RθJL
RθJA
TJ
TSTG
Value
20
100
-40 to +150
-55 to +150
Unit
°C/W
°C/W
°C
°C
Maximum Rated Surge Waveform
Waveform
2/10 us
8/20 us
10/160 us
10/700 us
10/560 us
10/1000 us
Standard
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T, K.20/K.21
FCC Part 68
GR-1089-CORE
Ipp (A)
300
250
150
100
75
50
Peak Value (Ipp)
tr = rise time to peak value
tp = decay time to half value
Half Value
tr
tp
TB0640M - TB3500M
Document number: DS30361 Rev. 10 - 2
2 of 6
www.diodes.com
November 2011
© Diodes Incorporated

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