TB0720M 查看數據表（PDF） - Diodes Incorporated.
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TB0720M Datasheet PDF : 6 Pages
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TB0640M - TB3500M
Electrical Characteristics @TA = 25°C unless otherwise specified
Part Number
TB0640M
TB0720M
TB0900M
TB1100M
TB1300M
TB1500M
TB1800M
TB2300M
TB2600M
TB3100M
TB3500M
Maximum
Rated
Repetitive
Off-State
Voltage
VDRM (V)
58
65
75
90
120
140
160
190
220
275
320
Maximum
Off-State
Leakage
Current @
VDRM
IDRM (uA)
5
5
5
5
5
5
5
5
5
5
5
Maximum
Breakover
Voltage
Maximum
On-State
Voltage
@ IT = 1A
VBO (V)
77
88
98
130
160
180
220
265
300
350
400
VT (V)
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
Breakover
Current
IBO
Min
(mA)
50
50
50
50
50
50
50
50
50
50
50
Max
(mA)
800
800
800
800
800
800
800
800
800
800
800
Holding Current
IH
Typical
Off-State
Capacitance
Min
(mA)
150
150
150
150
150
150
150
150
150
150
150
Max
(mA)
800
800
800
800
800
800
800
800
800
800
800
CO (pF)
140
140
140
90
90
90
90
60
60
60
60
Marking
Code
T064M
T072M
T090M
T110M
T130M
T150M
T180M
T230M
T260M
T310M
T350M
Notes:
Symbol
VDRM
IDRM
VBR
IBR
VBO
IBO
IH
VT
IPP
CO
Parameter
Stand-off Voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Breakover current
Holding current
Note 4
On state voltage
Peak pulse current
Off-state capacitance
Note 5
4. IH > (VL/RL) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge recovery time does not
exceed 30ms.
5. Off-state capacitance measured at f = 1.0MHz, 1.0VRMS signal, VR = 2VDC bias.
I
IPP
IBO
IH
IBR
IDRM
VT
V
VBR
VDRM
VBO
TB0640M - TB3500M
Document number: DS30361 Rev. 10 - 2
3 of 6
www.diodes.com
November 2011
© Diodes Incorporated
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