NBXSPA008 查看數據表（PDF） - ON Semiconductor

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NBXSPA008

2.5 V / 3.3 V, 161.1328MHz LVDS Clock Oscillator

ON Semiconductor 

NBXSPA008

Table 5. DC CHARACTERISTICS (VDD = 2.5 V ± 5% or VDD = 3.3 V ± 10%, GND = 0 V, TA = −40°C to +85°C) (Note 2)

Symbol

Characteristic

Conditions

Min.

Typ.

Max.

Units

IDD

VIH

VIL

IIH

IIL

DVOD

Power Supply Current

OE Input HIGH Voltage

OE Input LOW Voltage

Input HIGH Current

Input LOW Current

Change in Magnitude of VOD for

Complementary Output States

(Note 3)

85

2000

GND − 300

−100

−100

0

1

105

mA

VDD

mV

800

mV

+100

mA

+100

mA

25

mV

VOS

DVOS

Offset Voltage

Change in Magnitude of VOS for

Complementary Output States

(Note 3)

1125

1375

mV

0

1

25

mV

VOH

Output HIGH Voltage

VDD = 2.5 V

VDD = 3.3 V

1425

1600

mV

VOL

Output LOW Voltage

VDD = 2.5 V

900

1075

mV

VDD = 3.3 V

VOD

Differential Output Voltage

250

450

mV

NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit

board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared

operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit

values are applied individually under normal operating conditions and not valid simultaneously.

2. Measurement taken with outputs terminated with 100 ohm across differential pair. See Figure 4.

3. Parameter guaranteed by design verification not tested in production.

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