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NCL30083 查看數據表(PDF) - ON Semiconductor

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NCL30083 Datasheet PDF : 35 Pages
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NCL30083
Table 3. ELECTRICAL CHARACTERISTICS (Unless otherwise noted: For typical values TJ = 25°C, VCC = 12 V;
For min/max values TJ = −40°C to +125°C, Max TJ = 150°C, VCC = 12 V)
Description
Test Condition
Symbol
Min Typ
STARTUP AND SUPPLY CIRCUITS
Supply Voltage
Startup Threshold
Minimum Operating Voltage
Hysteresis VCC(on) – VCC(off)
Internal logic reset
Over Voltage Protection
VCC OVP threshold
VCC increasing
VCC decreasing
VCC decreasing
VCC(on)
VCC(off)
VCC(HYS)
VCC(reset)
VCC(OVP)
16
18
8.2 8.8
8
3.5 4.5
26
28
VCC(off) noise filter
VCC(reset) noise filter−
Startup current
Startup current in fault mode
Supply Current
Device Disabled/Fault
Device Enabled/No output load on pin 5
Device Switching (Fsw = 65 kHz)
CURRENT SENSE
VCC > VCC(off)
Fsw = 65 kHz
CDRV = 470 pF,
Fsw = 65 kHz
tVCC(off)
tVCC(reset)
ICC(start)
ICC(sFault)
ICC1
ICC2
ICC3
5
20
13
46
0.8 1.2
2.3
2.7
Maximum Internal current limit
Leading Edge Blanking Duration for VILIM
(Tj = −25°C to 125°C)
VILIM
tLEB
0.95
1
250 300
Leading Edge Blanking Duration for VILIM
(Tj = −40°C to 125°C)
tLEB
240 300
Input Bias Current
Propagation delay from current detection to gate off−state
Threshold for immediate fault protection activation
Leading Edge Blanking Duration for VCS(stop)
Blanking time for CS to GND short detection VpinVIN = 1 V
Blanking time for CS to GND short detection VpinVIN = 3.3 V
GATE DRIVE
DRV high
Ibias
tILIM
VCS(stop)
tBCS
tCS(blank1)
tCS(blank2)
0.02
50
1.35 1.5
120
6
2
Drive Resistance
DRV Sink
DRV Source
Drive current capability
DRV Sink (Note 4)
DRV Source (Note 4)
Rise Time (10% to 90%)
Fall Time (90% to 10%)
DRV Low Voltage
DRV High Voltage
4. Guaranteed by design
5. OTP triggers when RNTC = 4.7 kW
CDRV = 470 pF
CDRV = 470 pF
VCC = VCC(off)+0.2 V
CDRV = 470 pF,
RDRV = 33 kW
VCC = 30 V
CDRV = 470 pF,
RDRV = 33 kW
RSNK
RSRC
ISNK
ISRC
tr
tf
VDRV(low)
VDRV(high)
13
30
500
300
40
30
8
10
12
Max Unit
V
20
9.4
5.5
30
V
ms
30 mA
60 mA
mA
1.4
4.0
5.0
1.05 V
350 ns
350 ns
mA
150 ns
1.65 V
ns
12
ms
4
ms
W
mA
ns
ns
V
14
V
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