NCP1608 查看數據表（PDF） - ON Semiconductor
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NCP1608 Datasheet PDF : 24 Pages
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NCP1608
Table 3. ELECTRICAL CHARACTERISTICS (Continued)
VFB = 2.4 V, VControl = 4 V, Ct = 1 nF, VCS = 0 V, VZCD = 0 V, CDRV = 1 nF, VCC = 12 V, unless otherwise specified
(For typical values, TJ = 25°C. For min/max values, TJ = −40°C to 125°C, unless otherwise specified)
Characteristic
Test Conditions
Symbol
Min
Typ
RAMP CONTROL
Ct Peak Voltage
On Time Capacitor Charge Current
VControl = open
VControl = open
VCt = 0 V to VCt(MAX)
VCt(MAX)
Icharge
4.775
235
4.93
275
Ct Capacitor Discharge Duration
VControl = open
tCt(discharge)
−
50
VCt = VCt(MAX) −100 mV to 500 mV
PWM Propagation Delay
dV/dt = 30 V/ms
VCt = VControl − Ct(offset)
to VDRV = 10%
tPWM
−
130
CURRENT SENSE
Current Sense Voltage Threshold
Leading Edge Blanking Duration
Overcurrent Detection Propagation
Delay
VCS = 2 V, VDRV = 90% to 10%
dV/dt = 10 V/ms
VCS = VILIM to VDRV = 10%
VILIM
tLEB
tCS
0.45
0.5
100
190
40
100
Current Sense Bias Current
ZERO CURRENT DETECTION
VCS = 2 V
ICS
−1
−
ZCD Arming Threshold
ZCD Triggering Threshold
ZCD Hysteresis
ZCD Bias Current
Positive Clamp Voltage
Negative Clamp Voltage
ZCD Propagation Delay
VZCD = Increasing
VZCD = Decreasing
VZCD = 5 V
IZCD = 3 mA
IZCD = −2 mA
VZCD = 2 V to 0 V ramp,
dV/dt = 20 V/ms
VZCD = VZCD(TRIG) to VDRV = 90%
VZCD(ARM)
VZCD(TRIG)
VZCD(HYS)
IZCD
VCL(POS)
VCL(NEG)
tZCD
1.25
0.6
500
−2
9.8
−0.9
−
1.4
0.7
700
−
10
−0.7
100
Minimum ZCD Pulse Width
Maximum Off Time in Absence of ZCD
Transition
Falling VDRV = 10% to
Rising VDRV = 90%
tSYNC
−
70
tstart
75
165
DRIVE
Drive Resistance
Rise Time
Fall Time
Drive Low Voltage
Isource = 100 mA
Isink = 100 mA
10% to 90%
90% to 10%
VCC = VCC(on)−200 mV,
Isink = 10 mA
ROH
−
12
ROL
−
6
trise
−
35
tfall
−
25
Vout(start)
−
−
Max
Unit
5.025
V
297
mA
150
ns
220
ns
0.55
V
350
ns
170
ns
1
mA
1.55
V
0.83
V
900
mV
+2
mA
12
V
−0.5
V
170
ns
−
ns
300
ms
20
W
13
80
ns
70
ns
0.2
V
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