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NCP1611BDR2G(2011) 查看數據表(PDF) - ON Semiconductor

零件编号
产品描述 (功能)
生产厂家
NCP1611BDR2G
(Rev.:2011)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
NCP1611BDR2G Datasheet PDF : 28 Pages
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NCP1611
TYPICAL ELECTRICAL CHARACTERISTICS TABLE (Conditions: VCC = 15 V, TJ from 40°C to +125°C, unless otherwise
specified)
Symbol
Rating
Min
Typ
Max
Unit
CURRENT SENSE AND ZERO CURRENT DETECTION BLOCKS
TLEB,OCP
OverCurrent Protection Leading Edge Blanking Time (guaranteed by design) 100
200
350
ns
TLEB,OVS
“Overstress” Leading Edge Blanking Time (guaranteed by design)
50
100
170
ns
TOCP
OverCurrent Protection Delay from VCS/ZCD > VCS(th) to DRV low (dVCS/ZCD /
dt = 10 V/ms)
40
200
ns
VZCD(th)H
VZCD(th)L
VZCD(hyst)
RZCD/CS
VCL(pos)
IZCD(bias)
IZCD(bias)
TZCD
TSYNC
TWDG
TWDG(OS)
TTMO
IZCD(gnd)
STATIC OVP
Zero Current Detection, VCS/ZCD rising
Zero Current Detection, VCS/ZCD falling
Hysteresis of the Zero Current Detection Comparator
VZCD(th)H over VCS(th) Ratio
CS/ZCD Positive Clamp @ ICS/ZCD = 5 mA
CS/ZCD Pin Bias Current, VCS/ZCD = 0.75 V
CS/ZCD Pin Bias Current, VCS/ZCD = 0.25 V
(VCS/ZCD < VZCD(th)L) to (DRV high)
Minimum ZCD Pulse Width
Watch Dog Timer
Watch Dog Timer in “OverStress” Situation
TimeOut Timer
Source Current for CS/ZCD pin impedance Testing
675
750
825
mV
200
250
300
mV
375
500
mV
1.4
1.5
1.6
15.6
V
0.5
2.0
mA
0.5
2.0
mA
60
200
ns
110
200
ns
80
200
320
ms
400
800 1200
ms
20
30
50
ms
250
mA
DMIN
ONTIME CONTROL
Duty Cycle, VFB = 3 V, Vcontrol Pin Open
0
%
TON(LL)
Maximum On Time, Vsense = 1.4 V and Vcontrol maximum (CrM)
22
25
29
ms
TON(LL)2
On Time, Vsense = 1.4 V and Vcontrol = 2.5 V (CrM)
10.5 12.5 14.0
ms
TON(HL)
Maximum On Time, Vsense = 2.8 V and Vcontrol maximum (CrM)
7.3
8.5
9.6
ms
TON(LL)(MIN) Minimum On Time, Vsense = 1.4 V (not tested, guaranteed by characterization)
200
ns
TON(HL)(MIN) Minimum On Time, Vsense = 2.8 V (not tested, guaranteed by characterization)
100
ns
FEEDBACK OVER AND UNDERVOLTAGE PROTECTIONS (OVP AND UVP)
RsoftOVP
Ratio (Soft OVP Threshold, VFB rising) over VREF (VsoftOVP/VREF) (guaranteed 104
105
106
%
by design)
RsoftOVP(HYST)
RfastOVP2
Ratio (Soft OVP Hysteresis) over VREF (guaranteed by design)
Ratio (Fast OVP Threshold, VFB rising) over VREF (VfastOVP /VREF)
(guaranteed by design)
1.5
2.0
2.5
%
106
107
108
%
RUVP
Ratio (UVP Threshold, VFB rising) over VREF (VUVP/VREF) (guaranteed by
8
12
16
%
design)
RUVP(HYST)
Ratio (UVP Hysteresis) over VREF (guaranteed by design)
(IB)FB
FB Pin Bias Current @ VFB = VOV P and VFB = VUVP
BROWNOUT PROTECTION AND FEEDFORWARD
1
%
50
200
450
nA
VBOH
BrownOut Threshold, Vsense rising
0.96 1.00 1.04
V
VBOL
BrownOut Threshold, Vsense falling
0.86 0.90 0.94
V
VBO(HYST)
BrownOut Comparator Hysteresis
60
100
mV
TBO(blank)
BrownOut Blanking Time
35
50
65
ms
4. There is actually a minimum deadtime that is the delay between the core reset detection and the DRV turning on (TZD parameter of the
“Current Sense and Zero Current Detection Blocks” section).
http://onsemi.com
4

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