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NCP1611BDR2G(2011) 查看數據表(PDF) - ON Semiconductor

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NCP1611BDR2G
(Rev.:2011)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
NCP1611BDR2G Datasheet PDF : 28 Pages
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NCP1611
TYPICAL ELECTRICAL CHARACTERISTICS TABLE (Conditions: VCC = 15 V, TJ from 40°C to +125°C, unless otherwise
specified)
Symbol
Rating
Min
Typ
Max
Unit
BROWNOUT PROTECTION AND FEEDFORWARD
ICONTROL(BO)
Vcontrol Pin Sink Current, Vsense < VBOL
VHL
Comparator Threshold for Line Range Detection, Vsense rising
VLL
Comparator Threshold for Line Range Detection, Vsense falling
VHL(hyst)
Comparator Hysteresis for Line Range Detection
THL(blank)
Blanking Time for Line Range Detection
IBO(bias)
BrownOut Pin Bias Current, Vsense = VBOH
THERMAL SHUTDOWN
40
50
60
mA
2.1
2.2
2.3
V
1.6
1.7
1.8
V
400
500
600
mV
15
25
35
ms
250
250
nA
TLIMIT
Thermal Shutdown Threshold
150
°C
HTEMP
Thermal Shutdown Hysteresis
50
°C
4. There is actually a minimum deadtime that is the delay between the core reset detection and the DRV turning on (TZD parameter of the
“Current Sense and Zero Current Detection Blocks” section).
http://onsemi.com
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