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NCP3065 查看數據表(PDF) - ON Semiconductor

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NCP3065 Datasheet PDF : 18 Pages
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NCP3065, NCV3065
MAXIMUM RATINGS (measured vs. pin 4, unless otherwise noted)
Rating
Symbol
Value
Unit
VCC (Pin 6)
Comparator Inverting Input (Pin 5)
Darlington Switch Collector (Pin 1)
Darlington Switch Emitter (Pin 2) (Transistor OFF)
Darlington Switch Collector to Emitter (Pins 1-2)
Darlington Switch Current
Ipk Sense (Pin 7)
Timing Capacitor (Pin 3)
Power Dissipation and Thermal Characteristics
VCC
0 to +40
V
VCII
-0.2 to +VCC
V
VSWC
0 to +40
V
VSWE
-0.6 to +VCC
V
VSWCE
0 to +40
V
ISW
1.5
A
VIPK
-0.2 to VCC + 0.2
V
VTCAP
-0.2 to +1.4
V
PDIP-8 (Note 5)
ąThermal Resistance Junction-to-Air
SOIC-8 (Note 5)
ąThermal Resistance Junction-to-Air
DFN-8 (Note 5)
ąThermal Resistance Junction-to-Air
ąThermal Resistance Junction-to-Case
Storage Temperature Range
Maximum Junction Temperature
Operating Junction Temperature Range (Note 3)
ąNCP3065, NCV3065
RqJA
RqJA
RqJA
RqJC
TSTG
TJ(MAX)
TJ
100
180
78
14
-65 to +150
+150
-40 to +125
°C/W
°C/W
°C/W
°C
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device series contains ESD protection and exceeds the following tests:
ąPin 1-8: Human Body Model 2000 V per AEC Q100-002; 003 or JESD22/A114; A115
ąMachine Model Method 200 V
2. This device contains latch-up protection and exceeds 100 mA per JEDEC Standard JESD78.
3. The relation between junction temperature, ambient temperature and Total Power dissipated in IC is TJ = TA + Rq PD
4. The pins which are not defined may not be loaded by external signals
5. 1 oz copper, 1 in2 copper area
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