NCP370(2008) 查看數據表（PDF） - ON Semiconductor

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NCP370
(Rev.:2008)

Positive and Negative Overvoltage Protection with Internal Low RON N-MOSFETs and Reverse Charge Control Pin

ON Semiconductor 

NCP370

RDS(on) and Dropout

The NCP370 includes two internal low RDS(on)

N−MOSFETs to protect the system, connected on OUT pin,

from overvoltage, negative voltage and reverse current

protection. During normal operation, the RDS(on)

characteristics of the N−MOSFETs give rise to low losses on

Vout pin.

As example: Rload = 8 W, Vin= 5 V. RDS(on) = 155 mW. Iout

= 800 mA.

Vout = 4.905 V

NMOS Losses = RDS(on) x Iout2 = 0.155 x 0.82 = 0.0992 W

DEMO BOARD

Figure 8. Evaluation Board Schematic

ORDERING INFORMATION

Device

Marking

Package

Shipping†

NCP370MUAITXG

NCAI

370

LLGA12

(Pb−Free)

3000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

http://onsemi.com

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