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NCP553 查看數據表(PDF) - ON Semiconductor

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NCP553 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
NCP552, NCP553, NCV553
ELECTRICAL CHARACTERISTICS (Vin = Vout(nom.) + 1.0 V, Venable = Vin, Cin = 1.0 mF, Cout = 1.0 mF, TJ = 25°C, unless
otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (TA = 25°C, Iout = 10 mA)
1.5 V
1.8 V
2.5 V
2.7 V
2.8 V
3.0 V
3.3 V
5.0 V
Vout
V
1.455
1.5
1.545
1.746
1.8
1.854
2.425
2.5
2.575
2.646
2.7
2.754
2.744
2.8
2.856
2.94
3.0
3.06
3.234
3.3
3.366
4.900
5.0
5.100
Output Voltage (TA = −40°C to 85°C, Iout = 10 mA)
1.5 V
1.8 V
2.5 V
2.7 V
2.8 V
3.0 V
3.3 V
5.0 V
Vout
V
1.455
1.5
1.545
1.746
1.8
1.854
2.425
2.5
2.575
2.619
2.7
2.781
2.716
2.8
2.884
2.910
3.0
3.09
3.201
3.3
3.399
4.900
5.0
5.100
Output Voltage (TA = −40°C, Iout = 10 mA)
NCV553 −5.0 V
Vout
4.900
5.0
5.100
V
Output Voltage (TA = +125°C, Iout = 10 mA)
NCV553 −5.0 V
Vout
4.850
5.0
5.150
V
Line Regulation (Vin = Vout + 1.0 V to 12 V, Iout = 10 mA)
Regline
2.0
4.5
mV/V
Load Regulation (Iout = 1.0 mA to 80 mA, Vin = Vout + 2.0 V)
Regload
0.3
0.8
mV/mA
Output Current (Vout = (Vout at Iout = 80 mA) −3.0%)
1.5 V−3.9 V (Vin = Vout(nom.) + 2.0 V)
4.0 V−5.0 V (Vin = 6.0 V)
Io(nom.)
80
180
80
180
mA
Dropout Voltage (TA = −40°C to 125°C, Iout = 80 mA, Measured at
Vin−Vout
mV
Vout −3.0%)
1.5 V
1300
1800
1.8 V
1100
1600
2.5 V
800
1400
2.7 V
750
1200
2.8 V
730
1200
3.0 V
680
1000
3.3 V
650
1000
5.0 V
470
800
Quiescent Current
IQ
(Enable Input = 0 V)
(Enable Input = Vin, Iout = 1.0 mA to Io(nom.), Vin = Vout +2.0 V)
mA
0.1
1.0
2.8
6.0
Output Short Circuit Current (Vout = 0 V)
1.5 V−3.9 V (Vin = Vout(nom.) + 2.0 V)
4.0 V−5.0 V (Vin = 6.0 V)
Iout(max)
mA
100
300
450
100
300
450
Output Voltage Noise (f = 20 Hz to 100 kHz, Iout = 10 mA)
(Cout = 1.0 mF)
Vn
90
mVrms
Enable Input Threshold Voltage (NCP552 ONLY)
(Voltage Increasing, Output Turns On, Logic High)
(Voltage Decreasing, Output Turns Off, Logic Low)
Vth(en)
1.3
V
0.3
Output Voltage Temperature Coefficient
TC
"100
ppm/°C
3. Maximum package power dissipation limits must be observed.
PD
+
TJ(max) *TA
RqJA
4. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
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