NCP694DSANADJT1G(2010) 查看數據表（PDF） - ON Semiconductor

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NCP694DSANADJT1G
(Rev.:2010)

1A CMOS Low-Dropout Voltage Regulator

ON Semiconductor 

NCP694

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Input Voltage

Vin

6.5

V

Enable Voltage

VCE

−0.3 to Vin

V

Output Voltage

Vout

−0.3 to Vin + 0.3

V

Power Dissipation SOT−89−5

PD

900

mW

Power Dissipation HSON−6

PD

900

mW

Operating Junction Temperature

TJ

+150

°C

Operating Ambient Temperature

TA

−40 to +85

°C

Storage Temperature

Tstg

−55 to +125

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. This device series contains ESD protection and exceeds the following tests:

Human Body Model 2000 V per JEDEC

Machine Model Method 200 V

THERMAL CHARACTERISTICS

Rating

Symbol

Test Conditions

Typical Value Unit

Junction−to−Ambient SOT−89−5

RqJA

1 oz Copper Thickness, 100 mm2

111

°C/W

Power Dissipation SOT−89−5

Junction−to−Ambient HSON−6

PD

900

RqJA

1 oz Copper Thickness, 100 mm2

111

mW

°C/W

Power Dissipation HSON−6

PD

900

mW

NOTE: Single component mounted on an 80 x 80 x 1.5 mm FR4 PCB with stated copper head spreading area. Using the following

boundary conditions as stated in EIA/JESD 51−1, 2, 3, 7, 12.

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