NCP699 查看數據表（PDF） - ON Semiconductor

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NCP699

150 mA CMOS Low Iq LDO with Enable in TSOP-5

ON Semiconductor 

NCP699

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ PIN FUNCTION DESCRIPTION

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ PinNo. PinName

Description

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ 1

Vin

Positive power supply input voltage.

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ 2

Gnd

Power supply ground.

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ 3

Enable

This input is used to place the device into low−power standby. When this input is pulled low, the device is

disabled. If this function is not used, Enable should be connected to Vin.

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ 4

N/C

No internal connection.

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ 5

Vout

Regulated output voltage.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Input Voltage

Vin

2.1 to 6.0

V

Enable Voltage

Enable

−0.3 to Vin +0.3

V

Output Voltage

Vout

−0.3 to Vin +0.3

V

Power Dissipation

PD

Internally Limited

W

Operating Junction Temperature

TJ

+150

°C

Maximum Junction Temperature

TJ(max)

+150

°C

Operating Ambient Temperature

TA

−40 to +85

°C

Storage Temperature

Tstg

−55 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. This device series contains ESD protection and exceeds the following tests:

Human Body Model 2000 V per MIL−STD−883, Method 3015

Machine Model Method 200 V

2. Latch−up capability (85°C) "200 mA DC with trigger voltage.

THERMAL CHARACTERISTICS

Rating

Junction−to−Ambient

PSIJ−Lead 2

Symbol

RqJA

YJL2

Test Conditions

1 oz Copper Thickness, 100 mm2

1 oz Copper Thickness, 100 mm2

Typical Value

250

68

Unit

°C/W

°C/W

NOTE: Single component mounted on an 80 x 80 x 1.5 mm FR4 PCB with stated copper head spreading area. Using the following

boundary conditions as stated in EIA/JESD 51−1, 2, 3, 7, 12.

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