NCV8450A 查看數據表（PDF） - ON Semiconductor

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NCV8450A

Self-Protected High Side Driver with Temperature and Current Limit

ON Semiconductor 

NCV8450, NCV8450A

MAXIMUM RATINGS

Value

Rating

Symbol

Min

Max

Unit

DC Supply Voltage (Note 1)

Load Dump Protection

(RI = 2 W, td = 400 ms, VIN = 0, 10 V, IL = 150 mA, Vbb = 13.5 V)

Input Current

Output Current (Note 1)

Total Power Dissipation

@ TA = 25°C (Note 2)

@ TA = 25°C (Note 3)

Electrostatic Discharge (Note 4)

(Human Body Model (HBM) 100 pF/1500 W)

Input

All other

VD

VLoaddump

Iin

Iout

PD

−16

45

V

85

V

−15

15

mA

Internally Limited

A

W

1.13

1.60

kV

1

5

Single Pulse Inductive Load Switching Energy (Note 4)

EAS

(VDD = 13.5 V, I = 465 mApk, L = 200 mH, TJStart = 150°C)

29

mJ

Operating Junction Temperature

TJ

−40

+150

°C

Storage Temperature

Tstorage

−55

+150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Reverse Output current has to be limited by the load to stay within absolute maximum ratings and thermal performance.

2. Minimum Pad.

3. 1 in square pad size, FR−4, 1 oz Cu.

4. Not subjected to production testing.

THERMAL RESISTANCE RATINGS

Parameter

Thermal Resistance (Note 5)

Junction−to−Ambient (Note 2)

Junction−to−Ambient (Note 3)

5. Not subjected to production testing.

Symbol

RqJA

RqJA

Max Value

110

78.3

Unit

K/W

−+

IIN

IN

ID

VD

VOUT

OUT

NCV8450/A

Figure 2. Applications Test Circuit

www.onsemi.com

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