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NCV898031(2012) 查看數據表(PDF) - ON Semiconductor

零件编号
产品描述 (功能)
生产厂家
NCV898031
(Rev.:2012)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
NCV898031 Datasheet PDF : 13 Pages
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NCV898031
The total feedback resistance (Rupper + Rlower) should be
in the range of 1 kW – 100 kW.
Select Compensator Components
Current Mode control method employed by the
NCV898031 allows the use of a simple, Type II
compensation to optimize the dynamic response according
to system requirements.
Select MOSFET(s)
In order to ensure the gate drive voltage does not drop out
the MOSFET(s) chosen must not violate the following
inequality:
Qg(total)
v
Idrv
fs
Where: Qg(total): Total Gate Charge of MOSFET(s) [C]
Idrv: Drive voltage current [A]
fs: Switching Frequency [Hz]
The maximum RMS Current can be calculated as follows:
Ǹ ǒ Ǔ ID(max) +
DWC
IQ(peak)
2
)
ǒDIL1
)
3
DIL2Ǔ2
*
IQ(peak)ǒDIL1
)
DI
Ǔ
L2
where
IQ(peak) + IL1_peak ) IL2_peak
The maximum voltage across the MOSFET will be the
maximum output voltage, which is the higher of the
maximum input voltage and the regulated output voltaged:
VQ(max) + VOUT(max)
Select Diode
The output diode rectifies the output current. The average
current through diode will be equal to the output current:
ID(avg) + IOUT(max)
Additionally, the diode must block voltage equal to the
higher of the output voltage and the maximum input voltage:
VD(max) + VOUT(max)
The maximum power dissipation in the diode can be
calculated as follows:
PD + Vf (max) IOUT(max)
Where: Pd: Power dissipation in the diode [W]
Vf(max): Maximum forward voltage of the diode [V]
Oscillator
PWM Comparator S Q
R
GDRV
L
Gate
Drive
ISNS
+
CSA
Slope
Compensation
VFB
Voltage Error
VIN
VOUT
CO
RL
NCV898031
VEA
Compensation
Figure 11. Boost Current Mode Schematic
http://onsemi.com
10

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