NDB608A 查看數據表（PDF） - Fairchild Semiconductor
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NDB608A Datasheet PDF : 6 Pages
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Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
EAS
Single Pulse Drain-Source
VDD = 25 V, ID = 36 A
Avalanche Energy
IAR
Maximum Drain-Source Avalanche Current
Type Min Typ Max Units
NDP608AE
NDP608BE
NDB608AE
NDB608BE
200 mJ
36 A
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown
VGS = 0 V, ID = 250 µA
ALL
80
V
Voltage
IDSS
Zero Gate Voltage Drain
Current
VDS = 80 V,
VGS = 0 V
ALL
TJ = 125°C
IGSSF
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V
ALL
IGSSR
Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V
ALL
ON CHARACTERISTICS (Note 2)
250 µA
1 mA
100 nA
-100 nA
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
VDS = VGS,
ID = 250 µA
ALL
TJ = 125°C
2 2.9 4
V
1.4 2.3 3.2 V
VGS = 10 V,
ID = 18 A
TJ = 125°C
NDP608A
NDP608AE
NDB608A
NDB608AE
0.031 0.042 Ω
0.05 0.08 Ω
VGS = 10 V,
ID = 16 A
TJ = 125°C
NDP608B
NDP608BE
NDB608B
NDB608BE
0.045 Ω
0.09 Ω
VGS = 10 V, VDS = 10 V
NDP608A 36
A
NDP608AE
NDB608A
NDB608AE
NDP608B 32
A
NDP608BE
NDB608B
NDB608BE
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
VDS = 10 V, ID = 18 A
ALL
10 17.5
S
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Crss
Reverse Transfer Capacitance
ALL
1370 1800 pF
ALL
390 500 pF
ALL
140 200 pF
NDP608.SAM
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