NDS355 查看數據表（PDF） - Fairchild Semiconductor

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NDS355

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol Parameter

Conditions

OFF CHARACTERISTICS

BVDSS

IDSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

VGS = 0 V, ID = 250 µA

VDS = 24 V, VGS = 0 V

IGSSF

Gate - Body Leakage, Forward

IGSSR

Gate - Body Leakage, Reverse

ON CHARACTERISTICS (Note 2)

VGS(th)

Gate Threshold Voltage

VGS = 12 V, VDS = 0 V

VGS = -12 V, VDS= 0 V

VDS = VGS, ID = 250 µA

RDS(ON)

Static Drain-Source On-Resistance

VGS = 4.5 V, ID = 1.6 A

ID(ON)

On-State Drain Current

gFS

Forward Transconductance

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 2)

tD(on)

Turn - On Delay Time

tr

Turn - On Rise Time

tD(off)

Turn - Off Delay Time

tf

Turn - Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VGS = 10 V, ID = 1.9 A

VGS = 4.5 V, VDS = 5 V

VDS = 5 V, ID = 1.6 A

VDS = 10 V, VGS = 0 V,

f = 1.0 MHz

VDD = 10 V, ID = 1 A,

VGS = 10 V, RGEN = 6 Ω

VDS = 10 V, ID = 1.6 A,

VGS = 5 V

Min Typ Max Units

30

TJ=125°C

V

1

µA

10 µA

100 nA

-100 nA

1

1.6

2

V

TJ=125°C 0.5 1.3 1.5

0.125 Ω

TJ=125°C

0.25

0.085

6

A

3.5

S

245

pF

130

pF

20

pF

15 30 ns

14 30 ns

12 25 ns

4

10 ns

3.5

5

nC

1

nC

2

nC

NDS355N Rev. D1

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