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NDS355 查看數據表(PDF) - Fairchild Semiconductor

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NDS355 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Typical Electrical Characteristics
12
VGS =10V
9
6.0 5.0
4.5
4.0
6
3.5
3
3.0
0
0
1
2
3
4
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
1.6
ID = 1.6A
1.4
V =4.5V
GS
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation
with Temperature
2
VGS =3.5V
4.0
1.5
4.5
5.0
1
6.0
10
0.5
0
3
6
9
12
I , DRAIN CURRENT (A)
D
Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current
3
VGS = 4.5V
2.5
2
TJ= 125°C
1.5
25°C
-55°C
1
0.5
0
2
4
6
8
10
12
I D , DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Drain
Current and Temperature
10
VDS = 10V
8
TJ = -55°C 25°C
125°C
6
4
2
0
1
2
3
4
5
6
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
1.2
VDS = V GS
1.1
ID = 250µA
1
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
125
150
TJ , JUNCTION TEMPERATURE (°C)
Figure 6. Gate Threshold Variation with
Temperature
NDS355N Rev. D1

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